Field device and method of operating high voltage semiconductor device applied with the same

A field device, comprising:

• a substrate having a first conductive type;
• a first well having a second conductive type, extending down from a surface of the substrate and formed in the substrate;
• a second well having the first conductive type, extending down from the surface of the substrate and formed in the substrate, the second well adjacent to one side of the first well while the substrate at the other side of the first well;
• a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well, wherein doping concentration of the first doping region is larger than doping concentration of the second well;
• a conductive line, electrically connected to the first doping region and across the first well region;
• a conductive body, positioned between the conductive line and the first well, and the conductive body under the conductive line correspondingly across the first well region, wherein the conductive body is insulated from the conductive line;
• and
• a first insulation layer disposed on the first well and extending to the first doping region, wherein the conductive body is positioned above and across the first insulation layer.