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US 8,896,059 B1Granted
Semiconductor device including multi-layered gate, electronic device including the same, and method for forming the same
AssigneeSK hynix Inc.
InventorSeung Hwan Kim
Life of this patent
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Abstract
A semiconductor device including a multi-layered gate, is formed as a stacked structure of a plurality of layers having different work functions.
Claims16
A semiconductor device including a multi-layered gate, the semiconductor device comprising:
- a gate insulation film;
- and
- a gate formed over the gate insulation film,
- wherein the gate includes:
- a threshold-voltage increase layer formed over the gate insulation film, the threshold-voltage increase layer having a first work function;
- a resistance-reduction layer formed over the gate insulation film and having a second work function lower than the first work function;
- and
- a leakage prevention layer formed over the gate insulation film and having a third work function lower than the second work function.
5 more elements
A semiconductor device including a multi-layered gate, the semiconductor device comprising:
- a gate insulation film;
- and
- a gate formed over the gate insulation film,
- wherein the gate includes:
- a P+ polysilicon layer formed over the gate insulation film;
- a cobalt silicide (CoSi2) layer formed over the P+ polysilicon layer and the gate insulation film;
- and
- an N+ polysilicon layer formed over the cobalt silicide (CoSi2) layer and the gate insulation film.
5 more elements
An electronic device comprising:
- a memory device configured to store data and read the stored data in response to a data input/output (I/O) control signal;
- and
- a memory controller configured to generate the data I/O control signal, and control data I/O operations of the memory device,
- wherein the memory device includes:
- a gate insulation film;
- and
- a gate formed over the gate insulation film,
- wherein the gate includes:
- a threshold-voltage increase layer formed over the gate insulation film and having a first work function;
- a resistance-reduction layer formed over the gate insulation film and having a second work function lower than the first work function;
- and
- a leakage prevention layer formed over the gate insulation film and having a third work function lower than the second work function.
9 more elements
Dependencies are inferred from the claim text.