Semiconductor structure and method for manufacturing the same

A method of manufacturing a semiconductor structure, comprising:

• providing a substrate having a first conductive type;
• forming a deep well having a second conductive type in the substrate and extending down from a surface of the substrate;
• forming a first well having the first conductive type in the deep well and extending down from the surface of the substrate;
• forming a second well having the second conductive type in the deep well, the second well extending down from the surface of the substrate and spaced apart from the first well;
• forming an isolation extending down from the surface of the substrate and part of the isolation disposed in the second well;
• forming a gate electrode on the substrate and disposed between the first and second wells;
• and
• forming a conductive plug comprising a first portion and a second portion electrically connected to each other, the first portion connecting the gate electrode, and the second portion comprising at least two fingers penetrating into the isolation, and the fingers are spaced apart and electrically connected to each other;
• forming a first doping electrode region having the second conductive type within the first well and extending down from the surface of the substrate;
• and
• forming a second doping electrode region having the second conductive type within the second well and extending down from the surface of the substrate, so as to dispose the fingers between the first doping electrode region and the second doping electrode region.