Nonvolatile semiconductor memory device and method of manufacturing the same

A nonvolatile semiconductor memory device comprising:

• a semiconductor substrate;
• elements, each extending in a first direction and each including memory cells and first and second select gate transistors, the first select gate transistor arranged to a first side of the memory cells in the first direction, the second select gate transistor arranged to a second side of the memory cells in the first direction, the first direction being parallel to the semiconductor substrate, the elements including a first element, a second element, a third element, and a fourth element, the second element being stacked above the first element, the fourth element being stacked above the third element, both the third element and the fourth element being arranged in a second direction away from both the first element and the second element, the second direction being parallel to the semiconductor substrate, the second direction being orthogonal to the first direction;
• a first portion electrically connected to the first element;
• a second portion electrically connected to the second element;
• a third portion electrically connected to the third element;
• a fourth portion electrically connected to the fourth element, the first and second portions arranged to the first side, the third and fourth portions arranged to the second side;
• a third select gate transistor arranged between the first portion and the first element and between the second portion and the second element;
• and
• a fourth select gate transistor arranged between the third portion and the third element and between the fourth portion and the fourth element.