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US 8,896,053 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsHiraku Chakihara, Yasushi Ishii
Life of this patent
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Abstract
Technique of improving a manufacturing yield of a semiconductor device including a non-volatile memory cell in a split-gate structure is provided. A select gate electrode of a CG shunt portion is formed so that a second height d2 from the main surface of the semiconductor substrate of the select gate electrode of the CG shunt portion positioned in the feeding region is lower than a first height d1 of the select gate electrode from the main surface of the semiconductor substrate in a memory cell forming region.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- a first gate electrode formed to an upper portion of the semiconductor substrate;
- a second gate electrode formed on one of sidewalls of the first gate electrode and extended on the semiconductor substrate with the first gate electrode;
- an insulating film formed between the second gate electrode and the semiconductor substrate, and between the first gate electrode and the second gate electrode, the insulating film including a charge storage portion inside;
- and
- an interlayer insulating film formed on the semiconductor substrate to cover the first gate electrode and the second gate electrode,
- wherein the second gate electrode includes a first contact portion extended in a direction to be away from the first gate electrode from a position adjacent to the one of the sidewalls of the first gate electrode,
- wherein a first contact hole is formed to the interlayer insulating film above the first contact portion of the second gate electrode, and a first conductor portion buried in the first contact hole and the first contact portion of the second gate electrode are electrically connected, and
- wherein the first contact portion does not run over the first gate electrode,
- wherein the second gate electrode does not have a portion positioned above the first gate electrode.
7 more elements
Dependencies are inferred from the claim text.