Nonvolatile semiconductor memory device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMisako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Abstract
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
Claims18
A nonvolatile semiconductor memory device comprising:
- a semiconductor layer;
- a tunnel insulating film formed on the semiconductor layer, the tunnel insulating film including a first organic molecular film including first organic molecules each having an alkyl molecular chain as a main chain;
- a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material;
- a block insulating film formed on the charge storage layer;
- and
- a control gate electrode formed on the block insulating film,
- wherein the block insulating film includes a second organic molecular film including second organic molecules each having an alkyl molecular chain as a main chain.
A method of manufacturing a nonvolatile semiconductor memory device, comprising:
- forming a tunnel insulating film by binding first organic molecules each having an alkyl molecular chain as a main chain onto a semiconductor layer in a self-assembling manner;
- forming a charge storage layer made of an inorganic material on the tunnel insulating film;
- forming a block insulating film on the charge storage layer;
- and
- forming a control gate electrode on the block insulating film,
- wherein the forming the block insulating film includes binding second organic molecules each having an alkyl molecular chain as a main chain to the charge storage layer in a self-assembling manner.
A nonvolatile semiconductor memory device comprising:
- a substrate;
- a stacked body formed on the substrate, the stacked body having insulating layers and control gate electrode layers alternately stacked;
- a block insulating film formed along a side surface of a hole penetrating to the lowermost one of the control gate electrode layers, the hole extending from an upper surface of the stacked body in a stacking direction of the stacked body;
- a charge storage layer formed along an inner surface of the block insulating film;
- a tunnel insulating film formed along an inner surface of the charge storage layer, the tunnel insulating film including a first organic molecular film including first organic molecules each having an alkyl molecular chain as a main chain;
- and
- a semiconductor layer formed along an inner surface of the tunnel insulating film.
Dependencies are inferred from the claim text.