Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorHiroyuki Nansei
Life of this patent
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Abstract
According to one embodiment, a semiconductor device includes a lower layer connection object, a stacked body, an insulating film, and a via. The stacked body has a plurality of insulating layers and a plurality of electrode layers alternately stacked on the lower layer connection object. The stacked body has a staircase structure unit. The via connects uppermost electrode layer at each step of the staircase structure unit and the lower layer connection object through the via hole. The via has an upper part provided on and in contact with a top face of the uppermost electrode layer, and a penetrating part provided to be thinner than the upper part inside the insulating film in the via hole. The penetrating part connects the upper part and the lower layer connection object.
Claims13
A semiconductor device comprising:
- a lower layer connection object;
- a stacked body having a plurality of insulating layers and a plurality of electrode layers alternately stacked on the lower layer connection object, the stacked body having a staircase structure unit in which the plurality of electrode layers are processed into a staircase shape;
- an insulating film provided on a side wall of a via hole penetrating through the staircase structure unit to reach the lower layer connection object;
- and
- a via connecting uppermost electrode layer at each step of the staircase structure unit and the lower layer connection object through the via hole,
- the via having:
- an upper part provided on and in contact with a top face of the uppermost electrode layer;
- and
- a penetrating part provided to be thinner than the upper part inside the insulating film in the via hole, the penetrating part connecting the upper part and the lower layer connection object.
Dependencies are inferred from the claim text.