Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a first transistor comprising a first island-shaped semiconductor film, a first insulating film, a second insulating film, a floating gate, and a first conductive layer;
• a second transistor comprising a second island-shaped semiconductor film, a third insulating film, and a second conductive layer;
• a first wiring electrically connected to the first conductive layer;
• a second wiring electrically connected to the second conductive layer;
• and
• a third wiring electrically connected to the first transistor and the second transistor;
• and
• a fourth insulating layer over the first transistor and the second transistor,
• wherein the first insulating film, the floating gate, and the second insulating film are overlapped in this order and are interposed between the first island-shaped semiconductor film and the first conductive layer,
• wherein the third insulating film is interposed between the second island-shaped semiconductor film and the second conductive layer,
• wherein the second island-shaped semiconductor film includes a compound semiconductor,
• wherein the fourth insulating layer is in direct contact with a top surface of the first island-shaped semiconductor film, a side surface of the first insulating film, a side surface of the floating gate, a side surface of the second insulating film, and a top surface of the second island-shaped semiconductor film, and
• wherein a part of an end portion of the first island-shaped semiconductor film is coextensive with a part of an end portion of the first insulating film and a part of an end portion of the floating gate.