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US 8,896,045 B2Granted
Integrated circuit including sidewall spacer
AssigneeInfineon Technologies AG
InventorsJan Boris Philipp, Thomas Happ
Life of this patent
Estimating the term…
Abstract
A memory cell includes a first electrode, a second electrode, a layer of phase change material extending from a first contact with the first electrode to a second contact with the second electrode, and a sidewall spacer contacting the second electrode and a sidewall of the layer of phase change material adjacent to the second contact.
Claims20
An integrated circuit comprising:
- a wafer substrate;
- a first electrode;
- a second electrode;
- resistivity changing material extending from a first contact with the first electrode to a second contact with the second electrode;
- and
- a sidewall spacer contacting the second electrode and a sidewall of the resistivity changing material adjacent to the second contact, the sidewall spacer comprising a material with a higher resistance against etching than the resistivity changing material, and the sidewall spacer aligned with a portion of the first electrode in a direction perpendicular to the wafer substrate,
- wherein the first electrode is between the wafer substrate and the second electrode, and
- wherein the sidewall spacer comprises a first surface contacting the second electrode and a second surface coplanar with a surface of the first electrode, the second surface of the sidewall spacer being opposite to the first surface of the sidewall spacer, the first surface of the sidewall spacer and the second surface of the sidewall spacer being perpendicular to the wafer substrate, and the first surface of the sidewall spacer being spaced apart from the second surface of the sidewall spacer in a direction parallel to the wafer substrate;
- wherein the resistivity changing material comprises a first stack of phase change material in contact with a second stack of phase change material, wherein the first stack of phase change material is different in composition relative to the second stack of phase change material.
6 more elements
An integrated circuit comprising:
- a wafer substrate;
- a first electrode;
- a second electrode;
- resistivity changing material extending from a first contact with the first electrode to a second contact with the second electrode;
- and
- a sidewall spacer contacting the second electrode and a sidewall of the resistivity changing material adjacent to the second contact, the sidewall spacer comprising a material with a higher resistance against etching than the resistivity changing material, and the entire sidewall spacer aligned with a portion of the first electrode in a direction perpendicular to the wafer substrate,
- wherein the first electrode is between the wafer substrate and the second electrode,
- wherein the resistivity changing material comprises a lateral base contacting the first contact of the first electrode and a pillar disposed on a portion of the lateral base, the pillar contacting the second contact of the second electrode and extending substantially orthogonally from the base, and
- wherein the pillar is narrower than the base;
- wherein the resistivity changing material comprises a first stack of phase change material in contact with a second stack of phase change material, wherein the first stack if phase change material is different in compistition relative to the second stack of phase change material.
7 more elements
An integrated circuit comprising:
- a wafer substrate;
- a first electrode;
- a second electrode;
- resistivity changing material extending from a first contact with the first electrode to a second contact with the second electrode;
- and
- a sidewall spacer contacting the second electrode and a sidewall of the resistivity changing material adjacent to the second contact, the sidewall spacer comprising a material with a higher resistance against etching than the resistivity changing material, and the sidewall spacer aligned with a portion of the first electrode in a direction perpendicular to the wafer substrate,
- wherein the first electrode is between the wafer substrate and the second electrode,
- wherein the resistivity changing material comprises a first stack of phase change material in contact with a second stack of phase change material,
- wherein the first stack of phase change material is different in composition relative to the second stack of phase change material.
6 more elements
A memory cell comprising:
- a wafer substrate;
- a pillar phase change cell defined by a column of phase change material extending between opposing first and second electrodes;
- and
- a sidewall protection spacer contacting a perimeter of at least a portion of the column of phase change material and a perimeter of at least a portion of the second electrode, the sidewall protection spacer comprising a material with a higher resistance against etching than the phase change material, and the sidewall protection spacer aligned with a portion of the first electrode in a direction perpendicular to the wafer substrate,
- wherein the first electrode is between the wafer substrate and the second electrode, and
- wherein the sidewall protection spacer comprises a first surface contacting the second electrode and a second surface coplanar with a surface of the first electrode, the second surface of the sidewall protection spacer being opposite to the first surface of the sidewall protection spacer, the first surface of the sidewall protection spacer and the second surface of the sidewall protection spacer being perpendicular to the wafer substrate, and the first surface of the sidewall protection spacer being spaced apart from the second surface of the sidewall protection spacer in a direction parallel to the wafer substrate;
- wherein the phase change material comprises a first stack of phase change material in contact with a second stack of phase change material, wherein the first stack of phases change material is different in composition relatve to the second stack of phase change material.
4 more elements
A memory cell comprising:
- a wafer substrate;
- a pillar phase change cell defined by a column of phase change material extending between opposing first and second electrodes;
- and
- a sidewall protection spacer contacting a perimeter of at least a portion of the column of phase change material and a perimeter of at least a portion of the second electrode, the sidewall protection spacer comprising a material with a higher resistance against etching than the phase change material, and the entire sidewall protection spacer aligned with a portion of the first electrode in a direction perpendicular to the wafer substrate,
- wherein the first electrode is between the wafer substrate and the second electrode,
- wherein the column of phase change material is disposed on a portion of a lateral base of phase change material, the column of phase change material contacting the second electrode and the lateral base of phase change material contacting the first electrode, and
- wherein the column of phase change material is narrower than the lateral base of phase change material;
- wherein the phase change material comprises a first stack of phase change material in contact with a second stack of phase change material, wherein the first stack of phases change material is different in composition relatve to the second stack of phase change material.
5 more elements
A memory device comprising:
- a distribution circuit;
- a write pulse generator electrically coupled to the distribution circuit;
- a sense circuit electrically coupled to the distribution circuit and electrically coupled to the write pulse generator through a signal path;
- and
- an array of memory cells formed on a wafer substrate, the array of memory cells electrically coupled to the distribution circuit, each memory cell comprising:
- a pillar phase change cell defined by a column of phase change material extending between opposing first and second electrodes;
- and
- a sidewall spacer contacting a perimeter of at least a portion of the column of phase change material and a perimeter of at least a portion of the second electrode, the sidewall spacer comprising a material with a higher resistance against etching than the phase change material, and the entire sidewall spacer aligned with a portion of the first electrode in a direction perpendicular to the wafer substrate,
- wherein the first electrode is between the wafer substrate;
- wherein the phase change material comprises a first stack of phase change material in contact with a second stack of phase change material, wherein the first stack of phases change material is different in composition relative to the second stack of phase change material and the second electrode.
7 more elements
Dependencies are inferred from the claim text.