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US 8,896,042 B2Granted
Semiconductor device comprising oxide semiconductor
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama, Kiyoshi Kato
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Abstract
An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.
Claims10
A semiconductor device comprising:
- a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring,
- wherein one of the plurality of storage elements includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode;
- a second transistor having a second gate electrode, a second source electrode, and a second drain electrode;
- and a third transistor having a third gate electrode, a third source electrode, and a third drain electrode,
- wherein the first transistor is provided in a substrate including a semiconductor material,
- wherein the second transistor includes an oxide semiconductor layer,
- wherein the first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other,
- wherein the first wiring and the first source electrode are electrically connected to each other,
- wherein the first drain electrode and the third source electrode are electrically connected to each other,
- wherein the second wiring and the third drain electrode are electrically connected to each other,
- wherein the third wiring and the other of the second source electrode and the second drain electrode are electrically connected to each other,
- wherein the fourth wiring and the second gate electrode are electrically connected to each other, and
- wherein the fifth wiring and the third gate electrode are electrically connected to each other.
10 more elements
Dependencies are inferred from the claim text.