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US 8,896,040 B2Granted
Magneto-resistive random access memory (MRAM) having a plurality of concentrically aligned magnetic tunnel junction layers and concentrically aligned upper electrodes over a lower electrode
AssigneeSK hynix Inc.
InventorSeung Hyun Lee
Life of this patent
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Abstract
A method for manufacturing a semiconductor memory device includes forming a magnetic tunnel junction layer on a lower electrode, forming a spacer having an annular shape on the magnetic tunnel junction layer, forming upper electrodes on both sidewall surfaces of the annular shaped spacer, removing the spacer, and etching the magnetic tunnel junction layer by using the upper electrodes as an etch mask.
Claims7
A semiconductor memory device, comprising:
- a plurality of magnetic tunnel junction elements configured to store data;
- and
- a transistor commonly connected to the plurality of magnetic tunnel junctions elements,
- wherein the plurality of magnetic tunnel junction elements having an inner magnetic tunnel junction element and an outer magnetic tunnel junction element concentrically aligned over a lower electrode, and
- wherein a radius of each of the magnetic tunnel junction elements being smaller than that of the lower electrode.
2 more elements
Dependencies are inferred from the claim text.