Solid-state imaging device and method of manufacturing the same
AssigneeSony Corporation
InventorIkuo Yoshihara
Life of this patent
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Abstract
A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.
Claims17
A solid-state imaging device, comprising:
- a substrate configured to have a pixel region including a plurality of pixels and a peripheral region;
- a first isolation layer formed in the pixel region;
- a second isolation layer formed in the peripheral region;
- and
- wherein the first isolation layer is shallower than the second isolation layer.
Dependencies are inferred from the claim text.