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US 8,896,037 B2Granted
Solid-state imaging device and method for manufacturing the same
AssigneeSony Corporation
InventorsHarumi Ikeda, Masashi Nakazawa
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device including: a semiconductor layer; a charge accumulation region configured to be formed inside the semiconductor layer and serve as part of a photodiode; and a reflective surface configured to be disposed inside or under the charge accumulation region and be so formed as to reflect light that has passed through the charge accumulation region and direct the light toward a center part of the charge accumulation region.
Claims3
A solid-state imaging device comprising:
- a semiconductor layer with a light incident surface;
- a charge accumulation region formed inside the semiconductor layer and serving as part of a photodiode;
- and
- a reflective surface disposed inside the charge accumulation region or inside the semiconductor layer with the charge accumulation region between the semiconductor light incident surface and the reflective surface, the reflective surface formed so as to reflect light passing through the charge accumulation region and direct the reflected light toward a center part of the charge accumulation region,
- wherein,
- the reflective surface comprises a reflective film, the reflective film having a sidewall portion that reflects light obliquely incident on the semiconductor layer and directs the reflected light toward the center part of the charge accumulation region.
3 more elements
Dependencies are inferred from the claim text.