Field effect transistor having phase transition material incorporated into one or more components for reduced leakage current

A method of forming a field effect transistor, said method comprising:

• providing a semiconductor body;
• and
• forming a gate structure on a channel region in said semiconductor body such that said gate structure comprises:
• a gate dielectric layer on said channel region;
• and
• a gate electrode having a first section immediately adjacent to said gate dielectric layer on a first side of said channel region and a second section immediately adjacent to said gate dielectric layer on a second side of said channel region,
• said first side of said channel region being adjacent to a source region, said second side of said channel region being adjacent to a drain region, and said second section being different from said first section and comprising a phase transition material, and
• said phase transition material being pre-selected so as to be insulative when a voltage difference between said drain region and said source region is above a threshold difference and when said field effect transistor is in an OFF state and further so as to be conductive when said voltage difference between said drain region and said source region is above said threshold difference and when said field effect transistor is in an ON state;
• and,
• forming gate sidewall spacers on opposing sides of said gate structure immediately adjacent to said first section and said second section.