US 8,896,029 B2Granted

Solid state image pickup device and camera

AssigneeCanon Kabushiki Kaisha

InventorsToru Koizumi, Akira Okita, Masanori Ogura, Shin Kikuchi, Tetsuya Itano

Life of this patent

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Abstract

A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

Claims7

Dependent claims

A solid state image pickup device comprising a plurality of pixels arranged in a matrix, wherein each of the plurality of pixels includes:

a photoelectric conversion unit for generating electronic carriers based on an incident light;
a carrier holding unit for accumulating the electronic carriers generated in the photoelectric conversion unit;
and
a plurality of transistors for outputting a signal of the pixel,
wherein the matrix of the plurality of pixels includes first and second pixel columns adjacent to each other, and first and second pixel rows adjacent to each other,
wherein the carrier holding unit of a pixel included in the first pixel column is arranged between the photoelectric conversion unit of a pixel included in the first pixel column and the photoelectric conversion unit of a pixel included in the second pixel column, and
wherein the plurality of transistors of a pixel included in the first pixel row are arranged between a photoelectric conversion unit of a pixel included in the first pixel row and the photoelectric conversion unit of a pixel included in the second pixel row.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/752,732Filed 29 Jan 2013 · division
Priority: JP 2005-08034218 Mar 2005
Published: US 2013/0140665 A16 Jun 2013
Granted: 25 Nov 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10F 39/802
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
H04N 25/59
Control of the dynamic range: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the…
H10F 39/182
Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors: colour image sensors
H10F 39/1865
Having arrangements for blooming suppression: overflow drain structures

Family

Application11/373,191Parent of this division · filed 13 Mar 2006
Application12/259,359Parent of this division · filed 28 Oct 2008
US 7,460,162 B2Parent of this division · filed 2 Dec 2008
Application13/153,695Parent of this division · filed 6 Jun 2011
US 7,978,241 B2Parent of this division · filed 12 Jul 2011
US 2013/0140665 A1Pre-grant publication · published 6 Jun 2013
US 8,390,708 B2Parent of this division
US 2006/0208291 A1Published application
US 2009/0109314 A1Published application
US 2012/0217603 A1Published application
US 8,896,029 B2This patent

From the US filing history. Foreign family members aren’t listed.