Nitride semiconductor diode
AssigneeHitachi, Ltd.
InventorsAkihisa Terano, Kazuhiro Mochizuki, Tomonobu Tsuchiya
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Abstract
Disclosed is a high performance nitride semiconductor having a reverse leak current characteristic with two-dimensional electron gas as a conductive layer. A desired impurity is diffused into or a nitride semiconductor to which a desired impurity is added is re-grown on the bottom surface and the side face portion of a recessed portion formed by dry etching using chlorine gas on the upper surface of a nitride semiconductor stacked film to increase resistance of the side face portion of the nitride semiconductor stacked film contacting an anode electrode, reducing the reverse leak current.
Claims10
A nitride semiconductor diode comprising:
- a substrate;
- a heterojunction stacked film on which a first nitride semiconductor layer formed on the substrate and a second nitride semiconductor layer greater in band gap energy than the first nitride semiconductor layer are stacked;
- a cathode electrode ohmically connected with the side face of the stacked film;
- and
- an anode electrode,
- wherein the stacked film is provided with a recessed portion which reaches the depth of a heterojunction surface being the interface of the first and second nitride semiconductor layers,
- wherein the recessed portion is provided with a region where at least one type of impurity selected from among a group of carbon (C), iron (Fe), zinc (Zn), and magnesium (Mg) is implanted, and
- wherein the anode electrode contacts the region and is schottky connected with the stacked film.
Dependencies are inferred from the claim text.