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US 8,896,020 B2Granted
Method and apparatus for producing large, single-crystals of aluminum nitride
AssigneeCrystal IS, Inc.
InventorsLeo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
Life of this patent
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Abstract
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
Claims16
A semiconductor structure comprising:
- an aluminum nitride single-crystal substrate having a diameter greater than 25 mm and a surface substantially all of which has a single crystalline orientation;
- and
- an epitaxial layer disposed thereover, the epitaxial layer having an average dislocation density less than about 10,000 cm−2.
Dependencies are inferred from the claim text.