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US 8,896,019 B2Granted
Thin-film encapsulation, optoelectronic semiconductor body comprising a thin-film encapsulation and method for producing a thin-film encapsulation
AssigneeOSRAM Opto Semiconductors GmbH
InventorsFranz Eberhard, Sebastian Taeger, Korbinian Perzlmaier
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Abstract
A thin-film encapsulation for an optoelectronic semiconductor body includes a PVD layer deposited by a PVD method, and a CVD layer deposited by a CVD method, wherein the CVD layer is applied directly on the PVD layer, and the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer.
Claims17
A thin-film encapsulation, for an optoelectronic semiconductor or body comprising:
- a PVD layer deposited by a PVD method, and
- a CVD layer deposited by a CVD method,
- wherein
- the CVD layer is applied directly on the PVD layer, and
- the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer,
- wherein the PVD layer and CVD layer are a part of a thin-film encapsulation over a semiconductor body.
3 more elements
A method for producing a thin-film encapsulation comprising:
- depositing a PVD layer by a PVD method, and
- depositing a CVD layer by a CVD method,
- wherein
- the CVD layer is applied directly on the PVD layer, and
- the CVD layer is etched back such that the CVD layer only fills weak points in the PVD layer,
- wherein the PVD layer and CVD layer are a part of a thin-film encapsulation over a semiconductor body.
3 more elements
Dependencies are inferred from the claim text.