Light emitting diode
AssigneeHuga Optotech Inc.
InventorChih-Ching Cheng
Life of this patent
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Abstract
A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
Claims19
A light-emitting diode, comprising:
- a substrate;
- a first semiconductor layer disposed above the substrate;
- an active layer disposed above the first semiconductor layer;
- a second semiconductor layer disposed above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer;
- a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer;
- a first electrode disposed at a bottom of the trench, wherein the first electrode comprises at least one first finger;
- an insulating layer covering the first electrode;
- and
- a second electrode comprising at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
Dependencies are inferred from the claim text.