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US 8,896,008 B2Granted
Light emitting diodes having group III nitride surface features defined by a mask and crystal planes
AssigneeCree, Inc.
InventorMatthew Donofrio
Life of this patent
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Abstract
An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed.
Claims28
Light Emitting Diode (LED) comprising:
- a mesa that comprises a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure;
- an array of Group III Nitride truncated cones in the mesa face, at least two adjacent truncated cones in the array being spaced apart from one another;
- and
- a plurality of non-truncated cones between the at least two adjacent truncated cones that are spaced apart from one another.
1 more element
A Light Emitting Diode (LED) comprising:
- a mesa that comprises a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure;
- the mesa face comprising therein a plurality of Group III Nitride surface features comprising tops defined by mask features, comprising bottoms, and comprising sides that extend between the tops and the bottoms along crystal planes of the Group III Nitride.
Dependencies are inferred from the claim text.