Semiconductor light-emitting device and fabricating method thereof
AssigneeHigh Power Opto. Inc.
InventorsWei-Yu Yen, Li-Ping Chou, Fu-Bang Chen, Chih-Sung Chang
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Abstract
A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.
Claims5
A method for fabricating a semiconductor light-emitting device, comprising steps of:
- forming a light-emitting epitaxial structure with a first surface and a second surface opposite to the first surface;
- forming a closed protection structure over the second surface;
- forming a light reflective layer over the second surface so that the light reflective layer is filled into the closed protection structure;
- forming an resistivity-enhancing structure over the light reflective layer;
- and
- forming a first electrode structure electrically connected to the first surface corresponding to a position of the resistivity-enhancing structure;
- wherein the closed protection structure is formed prior to the step of forming the light reflective layer and surrounds a sidewall of the light reflective layer.
Dependencies are inferred from the claim text.