Nitride semiconductor light emitting device

A nitride semiconductor light-emitting diode, comprising:

• a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane;
• a first light-transmissive member for transmitting light from the active layer, the first light-transmissive member being arranged at a side surface of the nitride semiconductor light-emitting chip, the side surface being located in a direction perpendicular to a polarization direction of the polarized light;
• and
• a wavelength converting member for converting a wavelength of the polarized light which has emitted from the active layer;
• and
• wherein:
• the first light-transmissive member includes a light-transmissive substrate and a plurality of particles,
• the plurality of particles have a refractive index different from that of the light-transmissive substrate,
• the first light-transmissive member includes the plurality of particles at not less than 0.4% by weight and not more than 15% by weight,
• the plurality of particles are formed of at least one material selected from the group consisting of TiO2, SiO2, ZrO2, Nb2O5, ZnO, Al2O3 and AlN,
• the first light-transmissive member does not include a fluorescent material,
• the wavelength converting member contains a fluorescent material,
• the wavelength converting layer is plate-like,
• the plate-like wavelength converting layer covers the nitride semiconductor light-emitting chip,
• the first-transmissive member is not interposed between the nitride semiconductor light-emitting chip and the plate-like wavelength converting layer, when viewed in a cross-sectional view of the nitride semiconductor light-emitting diode, and
• the plate-like wavelength converting layer is parallel to the active layer, when viewed in a cross-sectional view of the nitride semiconductor light-emitting diode.