Low gate-leakage structure and method for gallium nitride enhancement mode transistor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Chih-Wen Hsiung, Chun Lin Tsai
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; and a gate stack disposed on the AlGaN layer. The gate stack includes a III-V compound n-type doped layer; a III-V compound p-type doped layer adjacent the III-V compound n-type doped layer; and a metal layer formed over the III-V compound p-type doped layer and the III-V compound n-type doped layer.
Claims11
A semiconductor structure comprising:
- a gallium nitride (GaN) layer on a substrate;
- an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer;
- and
- a gate stack disposed on the AlGaN layer, wherein the gate stack includes:
- a pair of layers forming a diode, wherein the pair of layers includes:
- a Group III-V compound n-type doped layer;
- and
- a Group III-V compound p-type doped layer adjacent the Group III-V compound n-type doped layer;
- a metal layer formed over the pair of layers;
- and
- a first dielectric layer interposing the pair of layers and the metal layer;
- wherein the Group III-V compound n-type doped layer, the Group III-V compound p-type doped layer, and the metal layer have substantially co-planar sidewalls.
A semiconductor structure comprising:
- a gallium nitride (GaN) layer on a substrate;
- an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer;
- a barrier layer disposed on the GaN layer;
- and
- a gate stack disposed on the barrier layer, wherein the gate stack includes:
- a Group III-V compound n-type doped layer;
- a Group III-V compound p-type doped layer adjacent the Group III-V compound n-type doped layer;
- a dielectric layer disposed on the Group III-V compound p-type doped layer;
- and
- a metal layer formed over the Group III-V compound p-type doped layer and the Group III-V compound n-type doped layer.
Dependencies are inferred from the claim text.