TFT flat sensor and manufacturing method therefor

#Embodiments of the present disclosure relate to a thin film transistor (TFT) flat sensor and a method for manufacturing the same.

#TFT flat X-ray sensors are key elements in digital image technology with advantages such as fast imaging speed, good spatial and density resolution, high ratio of signal-to-noise, direct digital signal output, and are widely applied in medical imaging (such as X-ray chest test), industrial detection (such as metal defect detection), safety detection and air transport.

#A traditional array substrate of TFT flat sensors has a structure as illustrated in FIG. 1. The array substrate comprises a plurality of gate scanning lines 10 and a plurality of data scanning lines 11 intersecting each other and a plurality of pixel units defined by the gate scanning lines 10 and the data scanning lines 11. Each pixel unit comprises one field effect transistor (FET) 12 connected with one adjacent gate scanning line 10 and one photodiode 13 connected with the data scanning line 11 via the field effect tube 12 connected to the photodiode 13.

#The present disclosure will become more fully understood from the detailed description given hereinafter and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present disclosure and wherein:

#FIG. 1 is a structural view of a traditional array substrate of TFT flat sensors;

#FIG. 2 is a structural view of one pixel unit of a traditional TFT flat sensors;

#In order to make objects, technical details and advantages of the embodiments of the disclosure apparent, the technical solutions of the embodiments will be described in a clearly and fully understandable way in connection with the drawings related to the embodiments of the disclosure. Apparently, the described embodiments are just a part but not all of the embodiments of the disclosure.

#Unless otherwise defined, all the technical and scientific terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which the present disclosure belongs. The terms “first,” “second,” etc., which are used in the description and the claims of the present application for disclosure, are not intended to indicate any sequence, amount or importance, but distinguish various components. Also, the terms such as “a,” “an,” or “the” etc., are not intended to limit the amount, but indicate the existence of at lease one. The terms “includes,” “including,” “comprises,” “comprising,” etc., are intended to specify that the elements or the objects stated before these terms encompass the elements or the objects and equivalents thereof listed after these terms, but do not preclude the other elements or objects. The phrases “connect”, “connected”, etc., are not intended to define a physical connection or mechanical connection, but may comprise an electrical connection, directly or indirectly. “On,” “under,” “right,” “left” and the like are only used to indicate relative position relationship, and when the position of the object which is described is changed, the relative position relationship may be changed accordingly.

#According to an embodiment of the present disclosure, only nine patterning processes are used to complete the manufacturing of a TFT flat sensor, thereby shortening production cycle, reducing production costs and enhancing production efficiency.