Organic light-emitting display device and method of manufacturing the same
AssigneeSamsung Display Co., Ltd.
InventorsSung-Ho Kim, Min-Chul Shin, Do-Young Kim
Life of this patent
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Abstract
An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: an active layer that is formed by patterning a semiconductor layer formed by laser crystallization; a gate electrode that is disposed to correspond to a channel area of the active layer; a first insulating layer that is disposed between the active layer and the gate electrode; a second insulating layer that is disposed on the gate electrode; and first test patterns that are formed on the second insulating layer and contact source and drain regions of the active layer and the gate electrode, respectively.
Claims15
An organic light-emitting display device comprising:
- available pixels disposed in a first arrangement for displaying an image by light emission;
- and
- dummy pixels disposed in a second arraignment different from the first arrangement around the available pixels for measuring characteristics of the available pixels, each dummy pixel comprising:
- an active layer comprised of polycrystalline silicon that is formed by patterning a semiconductor layer formed by laser crystallization, the active layer including a channel area and source and drain regions disposed on opposite sides of the channel area;
- a gate electrode that is disposed to correspond to the channel area of the active layer;
- a first insulating layer that is disposed between the active layer and the gate electrode;
- a second insulating layer that is disposed on the gate electrode;
- and
- a test element group pattern including at least first, second and third test patterns that are formed on the second insulating layer and contact the source region, the drain region and the gate electrode, respectively.
An organic light-emitting display device comprising:
- available pixels for displaying an image by light emission, and dummy pixels disposed around the available pixels for measuring characteristics of the available pixels, and
- each available pixel comprising a first active layer comprised of polycrystalline silicon formed by patterning a semiconductor layer formed by laser crystallization, a first gate electrode disposed to correspond to a channel area of the first active layer, and source and drain electrodes that contact source and drain regions of the first active layer and disposed on opposite sides of the channel area, respectively;
- and
- each dummy pixel comprising a second active layer formed by patterning the semiconductor layer, a second gate electrode disposed to correspond to a channel area of the second active layer, source and drain regions disposed on opposite sides of the channel area of the second active layer and a test element group pattern including at least first, second and third test patterns that contact the source region of the second active layer, the drain region of the second active layer and the second gate electrode, respectively.
Dependencies are inferred from the claim text.