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US 8,895,960 B2Granted
Electrode covering material, electrode structure and semiconductor device
AssigneeSony Corporation
InventorsMasaki Murata, Nobuhide Yoneya, Norio Kimura
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AssigneeSony Corporation
InventorsMasaki Murata, Nobuhide Yoneya, Norio Kimura
Estimating the term…
A semiconductor device is provided and includes a field effect transistor having a gate electrode, a gate insulating layer, a channel forming region composed of an organic semiconductor material layer and a source/drain electrode made of a metal. A portion of the source/drain electrode in contact with the organic semiconductor material layer comprising the channel forming region is covered with an electrode coating material. Because the electrode coating material is composed of organic molecules having a functional group which can be bound to a metal ion and a functional group that binds to the source/drain electrode composed of the metal, low contact resistance and high mobility can be achieved.
An electrode covering material comprising:
An electrode covering material comprising:
An electrode covering material comprising:
An electrode structure comprising:
An electrode structure comprising:
An electrode structure comprising:
A semiconductor device comprising a field effect transistor including a gate electrode, a gate insulating layer, a channel forming region constituted of an organic semiconductor material layer, and source/drain electrodes made of a metal, wherein the source/drain electrodes at portions thereof in contact with the organic semiconductor material layer making up of the channel-forming region are covered with the electrode covering material, and the electrode covering material consists of organic molecules represented by the Chemical Formula (1) wherein a functional group Y in Chemical Formula (1) binds to a surface of the source/drain electrodes made of a metal
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.
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Organic materials used in the body or electrodes of devices covered by this subclass: starburst compounds
Electrodes: ohmic electrodes, e.g. source or drain electrodes
Organic polymers or oligomers: comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
Coordination compounds: metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni
About 4 years 6 months of term left · ends 24 Apr 2031 (estimated)
The present application is a National Stage of International Application No. PCT/JP2007/072581 filed on Nov. 21, 2008 and which claims priority to Japanese Patent Application No. 2006-315845 filed on Nov. 22, 2006, the entire contents of which are being incorporated herein by reference.
This present disclosure relates to an electrode covering material, an electrode structure and a semiconductor device.
Where semiconductor devices are fabricated from conventional silicon semiconductor substrates and the like, a photolithographic technique and many thin film-forming techniques have been in use. However, these fabrication techniques are complicated and take a long time for the fabrication of semiconductor devices, thus presenting a serious obstacle to the reduction in fabrication costs of the semiconductor devices. Existing semiconductor devices are a so-called bulk, thus making it difficult to apply them to fields requiring flexibility and plasticity.
(A) and (B) of FIG. 1 are, respectively, a schematic, partially sectional view, of a semiconductor device of Example 1 and (C) of FIG. 1 is a conceptual view of a channel forming region and its neighborhood of the semiconductor device of Example 1.
FIG. 2 is a schematic, partially sectional view, of a semiconductor device of Example 2.
(A) and (B) of FIG. 3 are, respectively, conceptual views of a channel region and its neighborhood of semiconductor devices of Example 3 and Example 4.
Example 1 relates to an electrode covering material according to a first embodiment, an electrode structure according to a first embodiment and a semiconductor device according to a first embodiment. The semiconductor device of Example 1, or semiconductor devices of Example 2 to Example 4 appearing hereinafter comprises a field effect transistor including a gate electrode 13, a gate insulating layer 14, a channel forming region 16 constituted of an organic semiconductor material layer 17, and source/drain electrodes 15 made of a metal. And the source/drain electrodes 15 at portions thereof in contact with the organic semiconductor material layer 17 forming the channel forming region 16 are covered with electrode covering materials 21, 121, 221. The electrode structures of Example 1 or Example 2 to Example 4 appearing hereinafter comprise an electrode 15, and electrode covering materials 21, 121, 221 covering the surface of the electrode 15 therewith.
The semiconductor device of Example 1 more particularly comprises a bottom gate/bottom contact field effect transistor (FET) and still more particularly, of a thin film transistor (TFT). This bottom gate/bottom contact TFT includes, as shown in (B) of FIG. 1 which is a schematic, partially sectional view, with
(A) a gate electrode 13 formed on a support 10,