Light emitting element and method for manufacturing same

A fabrication method, for a light emitting element that includes a group IV semiconductor substrate and a plurality of core-multishell nanowires, formed using a III-V compound semiconductor, comprising the steps of:

• preparing a substrate such that an insulating film having a plurality of openings is deposited on a group IV semiconductor substrate having a (111) surface so as to cover the (111) surface;
• performing a low-temperature heat treatment for the substrate, and performing (111)1×1 reconstruction for the (111) surface;
• supplying a group III material or a group V material to the substrate under a low-temperature condition, and performing surface reconstruction for the (111) surface to provide a (111)A surface or a (111)B surface;
• permitting a center nanorod, formed of a III-V compound semiconductor of a first conductivity type, to grow through the opening from the (111) surface of the group IV semiconductor substrate;
• depositing, on side surfaces of the center nanorod, a first barrier layer, formed of a III-V compound semiconductor of the first conductivity type that has a bandgap larger than that of the III-V compound semiconductor used to form the center nanorod;
• depositing, on the first barrier layer, a quantum well layer, formed of a III-V compound semiconductor that has a bandgap smaller than that of the III-V compound semiconductor used to form the first barrier layer;
• depositing a second barrier layer on the quantum well layer, using a III-V compound semiconductor of a second conductivity type, which differs from the first conductivity type, that has the same composition as the III-V compound semiconductor used to form the first barrier layer;
• depositing, on the second barrier layer, a capping layer, formed of a III-V compound semiconductor of the second conductivity type, and depositing the plurality of core-multishell nanowires;
• in the plurality of core-multishell nanowires, filling a space between the adjacent core-multishell nanowires with an insulator or a semi-insulating semiconductor;
• for each of the plurality of core-multishell nanowires, forming a gap between the side surface of the core-multishell nanowire and the insulator or the semi-insulating semiconductor;
• filling the gap with a metal material and forming a second electrode;
• and
• forming a first electrode on the group IV semiconductor substrate.