Light emitting device and method of manufacturing the same

A light emitting device, comprising:

• a plurality of light emitting cell each comprising an N-type semiconductor layer, a P-type semiconductor layer disposed on the N-type semiconductor layer and an active layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, wherein the active layer and the P-type semiconductor layer cover a portion of a top surface of the N-type semiconductor layer, such that the top surface of the N-type semiconductor layer is partially exposed;
• a first insulation layer covering the plurality of light emitting cells, and comprising openings which expose at least partial top surfaces of the N-type semiconductor layer and the P-type semiconductor layer;
• an ohmic contact layer contacting the N-type semiconductor layer through the opening, and
• a second insulation layer covering the ohmic contact layer and the first insulation layer,
• wherein the ohmic contact layer at least partially covers the first insulation layer,
• wherein the second insulation layer has a substantially constant thickness with respect to surfaces of the plurality of light emitting cells, and
• wherein side surface of the P-type semiconductor layer and the active layer are inclined.