Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a first semiconductor layer of an n-type;
• a second semiconductor layer of a p-type;
• and
• a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and including
• a plurality of barrier layers and well layers alternately stacked in a first direction from the second semiconductor layer toward the first semiconductor layer with well layers disposed between opposed barrier layers, each of the barrier layers including a nitride semiconductor, and each of the well layers including a nitride semiconductor containing In,
• wherein one of the well layers is a p-side well layer located nearest to the second semiconductor layer among the well layers,
• the p-side well layer including a p-side interface part and an n-side interface part, the n-side interface part being provided between the p-side interface part and the first semiconductor layer,
• the p-side interface part being provided adjacent to one of the barrier layers, the one of the barrier layers being disposed between the p-side well layer and the second semiconductor layer, the one of the barrier layers physically contacting the p-side well layer, the p-side interface part having a first concentration of In, and
• the n-side interface part being provided adjacent to an other one of the barrier layers, the other one of the barrier layers being disposed between the p-side well layer and the first semiconductor layer, and the other one of the barrier layers physically contacting the p-side well layer, the n-side interface part having a second concentration of In,
• a first variation of the first concentration in a first plane perpendicular to the first direction being not more than a second variation of the second concentration in a second plane perpendicular to the first direction.