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US 8,895,953 B1Granted
Programmable memory elements, devices and methods having physically localized structure
AssigneeAdesto Technologies Corporation
InventorsJeffrey Allan Shields, John Ross Jameson, Wei Ti Lee
Life of this patent
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Abstract
A programmable memory element can include an insulating layer formed over a bottom structure; an opening formed in the insulating layer; a sidewall structure formed next to side surfaces of the opening; a tapered structure formed within the opening adjacent to the sidewall structure; and a solid electrolyte forming at least a portion of a structure selected from: the bottom structure, the sidewall structure, and the tapered structure.
Claims4
A programmable memory element, having at least one localized element structure, comprising:
- at least an anode electrode, solid electrolyte, and cathode electrode aligned with one another along a substantially vertical axis;
- wherein
- at least one of the electrodes includes a tapered structure having a wide portion that tapers to a narrow portion in the vertical axis direction, and
- the anode electrode is formed from at least one element oxidizable to ion conduct in the solid electrolyte;
- wherein the tapered structure forms at least part of the anode electrode and is formed within an opening having a sidewall structure formed thereon,
- the solid electrolyte is formed below the opening, and
- the cathode electrode is formed below the solid electrolyte.
4 more elements
Dependencies are inferred from the claim text.