Nonvolatile memory device using a varistor as a current limiter element

A nonvolatile memory element, comprising:

• a first electrode;
• a second electrode;
• a variable resistance layer disposed between the first electrode and the second electrode, the variable resistance layer comprising a metal oxide;
• a current limiting layer disposed between the first electrode and the variable resistance layer, the current limiting layer comprising a varistor layer;
• an oxygen deficient material layer disposed between the current limiting layer and the variable resistance layer, the oxygen deficient material layer operable to inhibit oxygen from the variable resistance layer;
• a first stabilizing layer;
• and
• a second stabilizing layer,
• wherein:
• the current limiting layer is disposed between the first stabilizing layer and the second stabilizing layer, and the first stabilizing layer and second stabilizing layer are operable to provide oxygen to the current limiting layer, and
• each of the first stabilizing layer and the second stabilizing layer comprise a material selected from the group of indium tin oxide and iridium oxide, and wherein the materials selected for each first stabilizing layer and second stabilizing layer are not the same.

A method of forming a nonvolatile memory element, comprising:

• forming a first electrode over a substrate;
• forming a second electrode over the substrate;
• forming a variable resistance layer between the first electrode and the second electrode, the variable resistance layer comprising a metal oxide;
• forming a current limiting layer between the first electrode and the variable resistance layer;
• forming a separation layer between the current limiting layer and the variable resistance layer, the separation layer comprising an oxygen deficient material;
• and
• forming the current limiting layer between a fist material layer and a second material layer,
• wherein each of the first material layer and the second material layer comprise a material selected from the group of indium tin oxide and iridium oxide, and wherein the materials selected for each first material layer and second material layer are not the same.