Memory device
AssigneeKabushiki Kaisha Toshiba
InventorYusuke Arayashiki
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Abstract
According to one embodiment, a memory device includes a first electrode, a second electrode and a resistance change film. The resistance change film is connected between the first electrode and the second electrode. An ion metal is introduced in a matrix material in the resistance change film. A concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film A layer made of only the ion metal is not provided in the memory device.
Claims13
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a resistance change film connected between the first electrode and the second electrode,
- wherein:
- an ion metal is introduced in a matrix material in the resistance change film,
- a concentration of the ion metal in a first region on the first electrode side of the resistance change film is higher than a concentration of the ion metal in a second region on the second electrode side of the resistance change film, and
- the memory device does not include a layer which supplies the resistance change film with ions.
A memory device comprising:
- a first electrode;
- a second electrode;
- and
- a resistance change film connected between the first electrode and the second electrode and having a film thickness of not less than 1 nm and not more than 100 nm,
- wherein:
- silver is introduced in amorphous silicon in the resistance change film,
- a concentration of silver in a first region is higher than a concentration of silver in a second region, the first region extending at a distance of two thirds or less of a film thickness of the resistance change film from a surface on the first electrode side of the resistance change film, and the second region extending at a distance of one third or less of a film thickness of the resistance change film from a surface on the second electrode side of the resistance change film,
- the concentration of silver in the first region is not less than 1×1018 (atoms/cm3) and not more than 2×1022 (atoms/cm3),
- the concentration of silver in the second region is 1×1021 (atoms/cm3) or less,
- a resistivity of the second region is 8×104 (Ω·m) or more,
- a voltage using the first electrode as a positive pole and the second electrode as a negative pole is applied to form a metal filament in the second region when the resistance change film transitions from a high resistance state to a low resistance state,
- a voltage using the first electrode as a negative pole and the second electrode as a positive pole is applied to eliminate at least part of the metal filament when the resistance change film transitions from a low resistance state to a high resistance state, and
- a layer made of only silver is not provided in the memory device.
Dependencies are inferred from the claim text.