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US 8,895,942 B2Granted
Dielectric treatment module using scanning IR radiation source
AssigneeTokyo Electron Limited
InventorsJunjun Liu, Jacques Faguet, Eric M. Lee, Dorel I. Toma, Hongyu Yue
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Abstract
A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Claims30
A process module for treating a dielectric film on a substrate, comprising:
- process chamber;
- a substrate holder coupled to said process chamber and configured to support a substrate;
- an infrared (IR) radiation source coupled to said process chamber and configured to expose said dielectric film to IR radiation, wherein said IR radiation source comprises one or more IR lasers configured to produce one or more IR beams;
- an IR optics system having a beam sizing device configured to enlarge a beam diameter of at least one of said one or more IR beams to produce an enlarged beam spot size on said substrate;
- and
- a radiation scanning device coupled to said process chamber, and configured to displace said one or more IR beams from said IR radiation source and to scan said one or more IR beams from said IR radiation source across said substrate,
- wherein said radiation scanning device is configured to displace and scan said one or more IR beams across said substrate in a first lateral direction and a second lateral direction, said second lateral direction being different than said first lateral direction.
4 more elements
Dependencies are inferred from the claim text.