Microstructure manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsShinan Wang, Takashi Nakamura, Takayuki Teshima, Yutaka Setomoto, Shinichiro Watanabe
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Abstract
A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.
Claims16
A microstructure manufacturing method comprising:
- forming a first insulating film on an Si substrate;
- exposing an Si surface by removing a part of the first insulating film;
- forming a recessed portion by etching the Si substrate from the exposed Si surface;
- forming a second insulating film on a sidewall and a bottom of the recessed portion;
- forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion;
- and
- filling the recessed portion with a metal by electrolytic plating,
- wherein the electrolytic plating is performed by energizing the Si exposed surface through the Si substrate, and
- wherein the metal is deposited from the Si exposed surface by the electrolytic plating.
A microstructure manufacturing method comprising:
- forming a first insulating film on a surface of an Si substrate;
- exposing an Si surface by removing a part of the first insulating film;
- forming a recessed portion by etching the Si substrate from the exposed Si surface;
- forming a second insulating film on a sidewall and a bottom of the recessed portion;
- exposing an Si surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion;
- applying a metal film on the exposed Si surface of the bottom;
- and
- filling the recessed portion with a metal from the metal film by electrolytic plating,
- wherein the electrolytic plating is performed by energizing the metal film through the Si substrate, and
- wherein the metal is deposited from a region, of the metal film, which is formed on the exposed Si surface by the electrolytic plating.
An absorption grating for absorbing a part of an X-ray comprising:
- an Si substrate including a plurality of recessed portions;
- and
- a metal filled in each of the plurality of recessed portions via an insulating film,
- wherein the insulating film is not formed on at least a part of a bottom of the recessed portion, and
- wherein the metal is in contact with an Si surface of the Si substrate at least on the part.
An absorption grating for absorbing a part of an X-ray comprising:
- an Si substrate including a plurality of recessed portions;
- and
- a metal filled in each of the plurality of recessed portions via an insulating film,
- wherein the insulating film is not formed on at least a part of a bottom of the recessed portion, and
- wherein a metal film is disposed between an Si surface of the Si substrate and the metal at least on the part.
A subject information acquiring apparatus, comprising:
- a diffraction grating for diffracting X-ray emitted from an X-ray source;
- an absorption grating for absorbing a part of the X-ray diffracted by the diffraction grating, the absorption grating comprising,
- an Si substrate with a plurality of recessed portions formed thereon, and a metal filled in each of the plurality of recessed portions via an insulating film,
- the insulating film being not disposed on at least a part of a bottom of the recessed portion, the metal being in contact with an Si surface of the Si substrate on the at least part;
- and
- a detector for detecting the X-ray which has passed through the absorption grating.
A subject information acquiring apparatus, comprising:
- a diffraction grating for diffracting X-ray emitted from an X-ray source;
- an absorption grating for absorbing a part of the X-ray diffracted by the diffraction grating, the absorption grating comprising,
- an Si substrate with a plurality of recessed portions formed thereon, a metal filled in each of the plurality of recessed portions via an insulating film, the insulating film being not disposed on at least a part of a bottom of the recessed portion, and a metal film disposed between an Si surface of the Si substrate and the metal on the at least part;
- and
- a detector for detecting the X-ray which has passed through the absorption grating.
Dependencies are inferred from the claim text.