Methods and apparatus for rapidly responsive heat control in plasma processing devices

An apparatus for processing a substrate, comprising:

• a process chamber;
• an RF source to provide RF energy to form a plasma in the process chamber;
• a component disposed in the process chamber so as to be heated by the plasma when formed;
• a heater configured to heat the component;
• a heat exchanger configured to remove heat from the component;
• a chiller coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein;
• a controller for opening or closing the flow control valve;
• a temperature measuring device situated to indicate a temperature of the component;
• and
• input(s) into the controller indicating the power going to the plasma forming electrodes or groups of such electrodes;
• wherein the controller substantially operates according to the following control parameters:
• if ΣωiPi > PUL and T > Tsp − dTLL
• open flow control valve
• if ΣωiPi < PLL and T < Tsp + dTUL
• close flow control valve
• where Tsp is a target temperature, dTUL is a predetermined upwards temperature differential from the target temperature, dTLL is a predetermined downwards temperature differential from the target temperature, Pi is the power consumption of one of i=1 to n plasma-forming electrodes and/or groups thereof, where co, is a weighting factor for one of i=1 to n sources of RF power being delivered to the process chamber, PUL is a predetermined upper limit for summed power consumption, and PLL is a predetermined lower limit for summed power consumption.