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US 8,895,848 B2Granted
p-Type semiconducting nickel oxide as an efficiency-enhancing anodal interfacial layer in bulk heterojunction solar cells
AssigneeNorthwestern University
InventorsMichael D. Irwin, Donald B. Buchholz, Tobin J. Marks, Robert P. H. Chang
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Abstract
The present invention, in one aspect, relates to a solar cell. In one embodiment, the solar cell includes an anode, a p-type semiconductor layer formed on the anode, and an active organic layer formed on the p-type semiconductor layer, where the active organic layer has an electron-donating organic material and an electron-accepting organic material.
Claims3
A solar cell, comprising:
- (a) a transparent substrate;
- (b) a tin-doped indium oxide (ITO) anode formed on the transparent substrate;
- (c) a nickel(II) oxide (NiO) layer formed on the ITO anode, wherein the NiO layer is a p-type semiconductor layer, and has a thickness of about 5-10 nm;
- (d) an active organic layer formed on the NiO layer, the active organic layer comprising poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester (PCBM), wherein the ratio of P3HT to PCBM in the active organic layer is about 1:1 in weight;
- (e) a lithium fluoride (LiF) layer formed on the active organic layer;
- and
- (f) a metallic cathode formed on the LiF layer, wherein the metallic cathode comprises an aluminum (Al) cathode,
- wherein the active organic layer is adapted such that when photo excited the active organic layer transports holes towards the ITO anode and transports electrons towards the cathode;
- and
- wherein the NiO layer is adapted such that the NiO layer blocks electrons leakage from the active organic layer to the anode and transports holes from the active organic layer to the anode.
7 more elements
Dependencies are inferred from the claim text.