Method of manufacturing semiconductor device and substrate processing apparatus

A method for manufacturing a semiconductor device, the method comprising:

• forming a first silicon oxide film having a prescribed film thickness on an inside of a processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the processing vessel in which a substrate is not housed;
• forming a thin film different from the silicon oxide film on a substrate by supplying a processing gas into the processing vessel in which the substrate is housed after the formation of the silicon oxide film;
• removing a deposit including the thin film adhered to the inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel in which a substrate is not housed, after executing the formation of the thin film a prescribed number of times;
• and
• forming a second silicon oxide film having the prescribed film thickness on the inside of the processing vessel by alternately supplying the silicon-containing gas, and the oxygen-containing gas and the hydrogen-containing gas into the processing vessel in which a substrate is not housed, after the removal of the deposit, wherein:
• the formation of the first silicon oxide film having the prescribed film thickness on the inside of the processing vessel and the formation of the second silicon oxide film having the prescribed film thickness on the inside of the processing vessel includes alternating:
• (1) forming a silicon-containing layer on the inside of the processing vessel by supplying the silicon-containing gas into the processing vessel that is heated and in which a pressure is set to be less than an atmospheric pressure, and
• (2) changing the silicon-containing layer to a silicon oxide layer by oxidizing the silicon-containing layer by a reactive species containing atomic oxygen, the reactive species containing the atomic oxygen being generated by supplying the oxygen-containing gas and the hydrogen-containing gas into the processing vessel that is heated and in which a pressure is set to be less than the atmospheric pressure, thermally activating the oxygen-containing gas and the hydrogen-containing gas in a non-plasma state and causing a reaction between the oxygen-containing gas and the hydrogen-containing gas in the processing vessel, and
• in the formation of the second silicon oxide film having the prescribed film thickness on the inside of the processing vessel, fluorine remaining in the processing vessel is reacted with the reactive species containing the atomic oxygen, and is discharged, while forming the second silicon oxide film on the inside of the processing vessel.

A substrate processing apparatus, comprising:

• a processing vessel configured to house a substrate;
• a heater configured to heat an inside of the processing vessel;
• a pressure adjuster configured to adjust a pressure in the processing vessel;
• a processing gas supply system configured to supply a processing gas into the processing vessel;
• a fluorine-containing gas supply system configured to supply a fluorine-containing gas into the processing vessel;
• a silicon-containing gas supply system configured to supply a silicon-containing gas into the processing vessel;
• an oxygen-containing gas supply system configured to supply an oxygen-containing gas into the processing vessel;
• a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the processing vessel;
• and
• a controller configured to control the heater, the pressure adjuster, the processing gas supply system, the fluorine-containing gas supply system, the silicon-containing gas supply system, the oxygen-containing gas supply system, and the hydrogen-containing gas supply system, the controller being configured to execute:
• forming a thin film different from a silicon oxide film on a substrate by supplying the processing gas into the processing vessel in which the substrate is housed;
• removing a deposit including the thin film adhered to the inside of the processing vessel by supplying the fluorine-containing gas into the processing vessel in which a substrate is not housed, after executing the formation of the thin film a prescribed number of times;
• and
• forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying the silicon-containing gas, and the oxygen-containing gas and the hydrogen-containing gas into the processing vessel in which the substrate is not housed, after the removal of the deposit, wherein:
• the formation of the silicon oxide film having the prescribed film thickness on the inside of the processing vessel includes alternating:
• (1) forming a silicon-containing layer on the inside of the processing vessel by supplying the silicon-containing gas into the processing vessel that is heated and in which a pressure is set to be less than an atmospheric pressure, and
• (2) changing the silicon-containing layer to a silicon oxide layer by oxidizing the silicon-containing layer by a reactive species containing atomic oxygen, the reactive species containing the atomic oxygen being generated by supplying the oxygen-containing gas and the hydrogen-containing gas into the processing vessel that is heated and in which a pressure is set to be less than the atmospheric pressure, thermally activating the oxygen-containing gas and the hydrogen-containing gas in a non-plasma state and causing a reaction between the oxygen-containing gas and the hydrogen-containing gas in the processing vessel, and
• the formation of the silicon oxide film having the prescribed film thickness on the inside of the processing vessel includes causing a reaction between fluorine remaining in the processing vessel and the reactive species containing the atomic oxygen, and discharging the fluorine, while forming the silicon oxide film on the inside of the processing vessel.