Semiconductor device with an insulation layer having a varying thickness

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor substrate with a first surface;
• forming an insulation layer on the first surface of the semiconductor substrate;
• forming a plurality of at least one of recesses and openings in the insulation layer, the plurality of the at least one of the recesses and openings arranged at a pitch (p) and each of the at least one of the recesses and openings having a lateral width (w), wherein at least one of the pitch (p) and the lateral width (w) varies in lateral direction, and wherein the plurality of the at least one of the recesses and openings defines a given region of the insulation layer;
• tempering the insulation layer comprising the plurality of the at least one of the recesses and openings at an elevated temperature so that the insulation layer diffluences to provide the insulation layer with a laterally increasing thickness at least in the given region;
• and
• forming a metal layer on the tempered insulation layer.