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US 8,895,447 B2Granted
Semiconductor hole structure
AssigneeMacronix International Co., Ltd.
InventorsNien-Yu Tsai, Wei Ming Chen
Life of this patent
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Abstract
A first dielectric layer is formed over a substrate. A second dielectric layer is formed over the first dielectric layer. A first opening is formed in the second dielectric layer. A second opening is formed in the first dielectric layer.
Claims13
A method for forming a semiconductor structure, comprising:
- forming a first dielectric layer over a substrate;
- forming a second dielectric layer over the first dielectric layer;
- patterning the second dielectric layer;
- forming a first opening in the second dielectric layer by etching;
- and
- forming a second opening in the first dielectric layer, wherein
- a profile of the second opening is more vertical than a profile of the first opening, wherein the forming the second opening in the first dielectric layer includes forming the second opening within the first opening.
4 more elements
A method for forming a semiconductor structure, comprising:
- forming a first dielectric layer over a substrate;
- forming a second dielectric layer over the first dielectric layer;
- patterning the second dielectric layer;
- forming a first opening in the second dielectric layer by etching;
- and
- forming a second opening in the first dielectric layer, wherein
- a profile of the second opening is more vertical than a profile of the first opening, and
- the patterning the second dielectric layer includes forming a photo resist layer and a hard mask layer over the second dielectric layer and patterning the photo resist layer and the hard mask layer.
5 more elements
A method for forming a semiconductor structure, comprising:
- forming a first dielectric layer over a substrate;
- forming a second dielectric layer over the first dielectric layer;
- patterning the second dielectric layer, the patterning the second dielectric layer including forming a photo resist layer over the second dielectric layer and patterning the photo resist layer;
- forming a first opening in the second dielectric layer by etching;
- forming a second opening in the first dielectric layer;
- and
- forming an insulating layer over the first and second dielectric layers and a sidewall of the first opening after the removing the photo resist layer, wherein
- a profile of the second opening is more vertical than a profile of the first opening.
5 more elements
Dependencies are inferred from the claim text.