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US 8,895,442 B2Granted
Cobalt titanium oxide dielectric films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Electronic apparatus and methods of forming the electronic apparatus include cobalt titanium oxide on a substrate for use in a variety of electronic systems. The cobalt titanium oxide may be structured as one or more monolayers. The cobalt titanium oxide may be formed by a monolayer by monolayer sequencing process such as atomic layer deposition.
Claims25
A method comprising:
- forming cobalt titanium oxide by a monolayer or partial monolayer sequencing process including:
- pulsing a cobalt-containing precursor;
- pulsing a titanium-containing precursor;
- and
- performing a removal process between pulsing the cobalt-containing precursor and pulsing the titanium-containing precursor such that a gas containing cobalt is not present when pulsing the titanium-containing precursor and a gas containing titanium is not present when pulsing the cobalt-containing precursor.
2 more elements
A method comprising
- forming a hemispherical grained polysilicon region;
- forming cobalt titanium oxide above the hemispherical grained polysilicon region, the cobalt titanium oxide formed by a monolayer or partial monolayer sequencing process including:
- pulsing a cobalt-containing precursor;
- pulsing a titanium-containing precursor;
- and
- performing a removal process between pulsing the cobalt-containing precursor and pulsing the titanium-containing precursor such that a gas containing cobalt is not present when pulsing the titanium-containing precursor and a gas containing titanium is not present when pulsing the cobalt-containing precursor.
3 more elements
A method comprising:
- forming an array of memory cells such that forming each memory cell includes forming cobalt titanium oxide, the cobalt titanium oxide formed by a monolayer or partial monolayer sequencing process including:
- pulsing a cobalt-containing precursor;
- pulsing a titanium-containing precursor;
- and
- performing a removal process between pulsing the cobalt-containing precursor and pulsing the titanium-containing precursor such that a gas containing cobalt is not present when pulsing the titanium-containing precursor and a gas containing titanium is not present when pulsing the cobalt-containing precursor;
- and
- forming circuitry to access the memory array.
4 more elements
Dependencies are inferred from the claim text.