Semiconductor die and method of forming Fo-WLCSP vertical interconnect using TSV and TMV

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer including a plurality of conductive through silicon vias formed through the semiconductor wafer;
• cutting a channel through the semiconductor wafer to provide a wafer segment;
• disposing a semiconductor die over the wafer segment;
• depositing an encapsulant over the semiconductor die and wafer segment;
• forming a first conductive through mold via through the encapsulant and over the conductive through silicon vias;
• forming a second conductive through mold via through the encapsulant and over a contact pad of the semiconductor die;
• forming a conductive layer over the encapsulant and electrically connected to the first and second conductive through mold vias;
• forming an insulating layer over the encapsulant and conductive layer;
• and
• forming a third conductive through mold via through the channel.

A method of making a semiconductor device, comprising:

• providing a substrate including a plurality of conductive vias formed through the substrate;
• disposing a semiconductor die over the substrate;
• depositing an encapsulant over the semiconductor die and substrate;
• forming a first via through the encapsulant to expose a conductive via of the substrate;
• forming a second via through the encapsulant and over a contact pad of the semiconductor die;
• and
• depositing an electrically conductive material in the first via and second via to form a first conductive through mold via extending through the encapsulant to the exposed conductive via of the substrate and
• a second conductive through mold via extending through the encapsulant to the semiconductor die.

A method of making a semiconductor device, comprising:

• providing a substrate including a plurality of conductive vias formed through the substrate;
• cutting channels through the substrate to provide a plurality of substrate segments including the conductive vias;
• disposing a first semiconductor die over a substrate segment from the plurality of substrate segments;
• depositing an encapsulant over the first semiconductor die and substrate segment;
• forming a first via through the encapsulant to expose a first conductive via of the substrate segment;
• forming a second via through the encapsulant and over a contact pad of the first semiconductor die;
• and
• depositing an electrically conductive material in the first via and second via to form a second conductive via extending through the encapsulant to the exposed first conductive via in the substrate segment and
• a third conductive via extending through the encapsulant to the first semiconductor die.