Method of forming a graphene cap for copper interconnect structures
AssigneeSamsung Electronics Co., Ltd.
InventorsGriselda Bonilla, Christos D. Dimitrakopoulos, Alfred Grill, James B. Hannon, Qinghuang Lin, Deborah A. Neumayer, Satoshi Oida, John A. Ott, Dirk Pfeiffer
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Abstract
Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.
Claims17
A method of forming an interconnect structure comprising:
- providing a structure comprising at least one copper structure contained within at least one opening present in a dielectric material, said at least one copper structure having an uppermost surface that is coplanar with an uppermost surface of the dielectric material;
- forming a metal-containing cap directly on the uppermost surface of said at least one copper structure;
- and
- forming a graphene cap directly on an uppermost surface of metal-containing cap, wherein said graphene cap has edges that are vertically coincident with edges of said metal-containing cap and edges of said at least one copper structure.
A method of forming an interconnect structure comprising:
- providing a structure comprising at least one copper structure contained within at least one opening present in a dielectric material, said at least one copper structure having an uppermost surface that is coplanar with an uppermost surface of the dielectric material;
- and
- forming a graphene cap directly on the uppermost surface of said at least one copper structure, wherein said graphene cap edges that are vertically coincident with edges of said at least one copper structure, wherein said forming said graphene cap comprises a selective deposition process that is performed at a temperature not exceeding 400° C. and utilizing a carbon source selected from the group consisting of benzene, propane and ethane.
Dependencies are inferred from the claim text.