Method for fabricating semiconductor device
AssigneePanasonic Corporation
InventorsTakeshi Harada, Toru Hinomura, Naoki Torazawa, Tatsuya Kabe
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Abstract
A method for fabricating a semiconductor device includes: forming an interlayer insulating film on a substrate; forming a first hard mask formation film on the interlayer insulating film; altering the first hard mask formation film; after the altering of the first hard mask formation film, transferring an interconnect groove pattern to the altered first hard mask formation film to form a first hard mask made of the altered first hard mask formation film; and etching the interlayer insulating film using the first hard mask to form an interconnect groove in the interlayer insulating film. The first hard mask formation film is made of a metal film or a metallic compound film.
Claims11
A method for fabricating a semiconductor device, the method comprising:
- forming an interlayer insulating film on a substrate;
- sequentially forming a first hard mask formation film and a second hard mask formation film on the interlayer insulating film;
- transferring an interconnect groove pattern to the first and second hard mask formation films to form a first hard mask made of the first hard mask formation film and a second hard mask made of the second hard mask formation film;
- and
- etching the interlayer insulating film using the first and second hard masks to form an interconnect groove in the interlayer insulating film, wherein
- the first and second hard mask formation films contain an identical metal element.
Dependencies are inferred from the claim text.