Method of making a semiconductor device comprising a land grid array flip chip bump system with short bumps

A method of making a semiconductor device, comprising:

• providing a semiconductor wafer including a plurality of semiconductor die comprising a plurality of contact pads;
• forming an insulating layer over the semiconductor wafer and the plurality of contact pads;
• forming a plurality of openings in the insulating layer over the contact pads;
• forming a first conductive layer over and electrically connected to the plurality of contact pads;
• forming a second conductive layer over and electrically connected to the first conductive layer;
• providing a mask including a plurality of mask openings with a width less than a width of the openings in the insulating layer;
• disposing the mask over the semiconductor wafer with the mask openings aligned over the plurality of contact pads;
• depositing a conductive bump material within the plurality of mask openings and on the second conductive layer;
• removing the mask;
• reflowing the conductive bump material to form a plurality of bumps with a height of a first bump of the plurality of bumps less than a width of the first bump;
• and
• singulating the plurality of semiconductor die.