Manufacture method of thin film transistor array substrate
AssigneeShenzhen China Star Optoelectronics Technology Co., Ltd.
InventorShijian Qin
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Abstract
Disclosed is a manufacture method of the thin film transistor array, comprising depositing a first transparent conductive layer and a first metal layer to perform patterning for forming a common electrode, a gate electrode and a transparent electrode array; depositing an insulating layer, an active layer, an ohmic contact layer and a second metal layer to perform patterning for forming a source and a drain; depositing a second transparent conductive layer to perform patterning for forming a source contact layer, a drain contact layer and a pixel electrode array connected to the drain contact layer. The present invention simplifies the manufacture process, saves the cost and time for the manufacture.
Claims15
A manufacture method of a thin film transistor array substrate, comprising steps of:
- A. depositing a first transparent conductive layer and a first metal layer sequentially to perform patterning for forming a common electrode, a gate electrode and a transparent electrode array;
- B. depositing an insulating layer, an active layer, an ohmic contact layer and a second metal layer sequentially to perform patterning for forming a source and a drain at two sides of the active layer;
- C. depositing a second transparent conductive layer to perform patterning for forming a source contact layer, a drain contact layer and a pixel electrode array connected to the drain contact layer;
- D. forming a protective layer on a trench surface of the active layer;
- the first transparent conductive layer and the first metal layer are sequentially deposited by sputtering in step A;
- a half tone mask is employed to perform patterning for forming the common electrode, the gate electrode and the transparent electrode array in step A;
- the insulating layer, the active layer, the ohmic contact layer and the second metal layer are sequentially deposited by chemical vapor deposition in step B;
- the second transparent conductive layer is deposited by sputtering in step C.
A manufacture method of a thin film transistor array substrate, comprising steps of:
- A. depositing a first transparent conductive layer and a first metal layer sequentially to perform patterning for forming a common electrode, a gate electrode and a transparent electrode array;
- B. depositing an insulating layer, an active layer, an ohmic contact layer and a second metal layer sequentially to perform patterning for forming a source and a drain at two sides of the active layer;
- C. depositing a second transparent conductive layer to perform patterning for forming a source contact layer, a drain contact layer and a pixel electrode array connected to the drain contact layer;
- D. forming a protective layer on a trench surface of the active layer.
The manufacture method of the thin film transistor array according to 6, characterized in that the second transparent conductive layer is deposited by sputtering in step C.
Dependencies are inferred from the claim text.