Method for making semiconductor diodes with low reverse bias currents

A method of forming a diode, comprising:

• providing a III-N material structure having an electrically conductive channel therein;
• forming a recess in the III-N material structure;
• forming two terminals, wherein a first terminal is an anode adjacent to the III-N material structure, and a second terminal is a cathode in ohmic contact with the electrically conductive channel;
• and
• depositing a dielectric layer over at least a portion of the anode;
• wherein
• at least a portion of the anode is in the recess;
• and
• the anode includes a first metal layer comprising nickel adjacent to the III-N material structure, a second metal layer comprising gold, and an intermediary electrically conductive structure between the first metal layer and the second metal layer, the intermediary electrically conductive structure comprising a layer of gold adjacent to the first metal layer and a layer of nickel between the layer of gold and the second metal layer.