III-N device structures and methods
AssigneeTransphorm Inc.
InventorsPrimit Parikh, Yuvaraj Dora, Yifeng Wu, Umesh Mishra, Nicholas Fichtenbaum, Rakesh K. Lal
Life of this patent
Estimating the term…
Abstract
A III-N device is described with a III-N layer, an electrode thereon, a passivation layer adjacent the III-N layer and electrode, a thick insulating layer adjacent the passivation layer and electrode, a high thermal conductivity carrier capable of transferring substantial heat away from the III-N device, and a bonding layer between the thick insulating layer and the carrier. The bonding layer attaches the thick insulating layer to the carrier. The thick insulating layer can have a precisely controlled thickness and be thermally conductive.
Claims21
A method of making a III-N device comprising:
- forming on a substrate a first structure comprising a III-N semiconductor layer having an electrode, an insulating layer on a side of the III-N semiconductor layer opposite the substrate, and a first bonding layer over the insulating layer;
- forming a second structure, wherein the forming of the second structure comprises applying a second bonding layer to a high thermal conductivity carrier;
- and
- after forming the first and second structures, bonding the second bonding layer of the second structure to the first bonding layer of the first structure.
A method of forming a III-N device, comprising:
- forming a III-N material on a substrate, the substrate having a thickness, wherein the III-N material contacts the substrate, and a crystalline structure of the III-N material adjacent to the substrate at least partially conforms to or is at least partially determined by a crystalline structure of the substrate;
- forming an electrode adjacent the III-N material on a side of the III-N material opposite the substrate;
- forming an aperture through the entire thickness of the substrate;
- and
- depositing an insulating material in the aperture, the insulating material contacting the III-N material;
- wherein
- the aperture is opposite the electrode, and the insulating material extends over a side of the substrate opposite the III-N layer.
A method of forming a III-N device, comprising:
- providing a substrate, the substrate having a thickness;
- forming a III-N material on the substrate, the III-N material comprising a III-N channel layer and a III-N barrier layer, wherein a two-dimensional electron gas is in the III-N channel layer near an interface between the III-N channel layer and the III-N barrier layer;
- forming an electrode adjacent the III-N material on a side of the III-N material opposite the substrate;
- forming an aperture through the entire thickness of the substrate;
- and
- depositing an additional layer in the aperture, the additional layer contacting the III-N material;
- wherein
- the additional layer comprises an element selected from the group consisting of silicon nitride, aluminum nitride, alumina, a polymeric dielectric, and an organic dielectric.
Dependencies are inferred from the claim text.