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US 8,895,418 B2Granted
Semiconductor device and method for producing a semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsPeter Irsigler, Thomas Neidhart, Guenter Schagerl, Hans-Joachim Schulze
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Abstract
One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities.
Claims23
A method of manufacturing a semiconductor device, comprising:
- implanting impurities in a semiconductor body via a first side of the semiconductor body;
- forming a drift zone layer on the first side of the semiconductor body;
- and
- removing at least a portion of the semiconductor body from a second side of the semiconductor body being opposite of the first side, the removing of the semiconductor body terminating at least at a pn junction defined by the implanted impurities,
- wherein prior to implanting the impurities, forming a semiconductor layer on the first side of the semiconductor body;
- and
- implanting impurities in the semiconductor layer.
4 more elements
A semiconductor device comprising:
- a semiconductor body having a first side and a second side;
- one or a plurality of field stop zones are formed within the semiconductor body, the one or each of the plurality of field stop zones having a vertical distance b1 from a maximum of a dopant concentration to a half maximum of the one or each of the plurality of field stop zones in the direction of the first side and a vertical distance b2 from the maximum of the dopant concentration to the half maximum in the direction of the second side of the semiconductor body, wherein 0.9<b1/b2<1.1.
Dependencies are inferred from the claim text.