Reducing contact resistance for field-effect transistor devices
AssigneeInternational Business Machines Corporation
InventorsAli Afzali-Ardakani, Bhupesh Chandra, George Stojan Tulevski, Fengnian Xia
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Abstract
A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.
Claims21
A method for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode, comprising:
- selectively applying a water-soluble dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device, wherein said water-soluble dopant comprises one of cerium ammonium nitrate and cerium ammonium sulfate, and wherein said selectively applying comprises placing the at least one of a graphene and a nanotube field-effect transistor device in a water-soluble dopant solution for a duration of time based on the concentration of the water-soluble dopant.
An apparatus, comprising:
- a substrate;
- at least one of a graphene and a nanotube field-effect transistor device fabricated on the substrate with an exposed contact region, wherein the contact region is doped with a water-soluble dopant for a duration of time based on the concentration of the water-soluble dopant, wherein said water-soluble dopant comprises one of cerium ammonium nitrate and cerium ammonium sulfate;
- and
- contact metal deposited over the doped contact region of the at least one of a graphene and a nanotube field-effect transistor device.
An apparatus, comprising:
- contact metal;
- a substrate;
- and
- at least one of a graphene and a nanotube field-effect transistor device fabricated on the substrate and deposited over the contact metal, wherein material areas supported under by the contact metal are doped with a water-soluble dopant for a duration of time based on the concentration of the water-soluble dopant, wherein said water-soluble dopant comprises one of cerium ammonium nitrate and cerium ammonium sulfate.
Dependencies are inferred from the claim text.