Method and apparatus for forming amorphous silicon film
AssigneeTokyo Electron Limited
InventorsAkinobu Kakimoto, Satoshi Takagi, Kazumasa Igarashi
Life of this patent
Estimating the term…
Abstract
A method of forming an amorphous silicon film includes: forming a seed layer on a surface of a base by heating the base and supplying an amino silane-based gas to the heated base, forming the amorphous silicon film with thickness for layer growth on the seed layer by heating the base and supplying a silane-based gas containing no amino group to the seed layer on the surface of the heated base, and decreasing a film thickness of the amorphous silicon film by etching the amorphous silicon film formed with thickness for layer growth.
Claims8
A method of forming an amorphous silicon film on a base, the method comprising:
- adsorbing an aminosilane onto the base by heating the base and supplying an amino silane-based gas to the heated base;
- forming the amorphous silicon film on the base onto which the aminosilane is adsorbed by heating the base and supplying a silane-based gas containing no amino group on the heated base onto which the aminosilane is adsorbed;
- and
- etching the amorphous silicon film to decrease a film thickness of the amorphous silicon film,
- wherein the amino silane-based gas is selected from gases comprising at least one of diisopropyl aminosilane (DIPAS), tridimethyl aminosilane (TDMAS), and bisdiethyl aminosilane (BDEAS).
Dependencies are inferred from the claim text.